EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM industrial adaptation is the write energy and latency. In this paper, we overcome by exploiting stochastic activity of cells and, tandem, with circuit-level approximation. We enforce robustness our technique analyzing vulnerability operation against radiation-induced soft errors applying low-cost improvement. Due serious reliability challenges nanometer-scale technology, proposed circuit also analyzed presence CMOS tunnel junction (MTJ) process variation. Compared state-of-the-art, achieved 33.04% 5.47% lower latency, respectively, 3.7% area overhead, memory-centric applications.